Si/Sige HETEROJUNCTION BIPOLAR TRANSISTORS (A REVIEW)

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Eskişehir Osmangazi Üniversitesi Mühendislik ve Mimarlık Fakültesi Dergisi
Volume:13 Issue:1
Si/Sige HETEROJUNCTION BIPOLAR TRANSISTORS (A REVIEW)

Si/Sige HETEROJUNCTION BIPOLAR TRANSISTORS (A REVIEW)

Authors : Hasan Hüseyin ERKAYA

Pages : 46-65

View : 8 | Download : 16

Publication Date : 2000-06-30

Article Type : Research Paper

Abstract :The research on Sı/SiGe heterojunction bipolar transisfors has led the ultra-high-speed transıstors tha! are compatible wilh the state-of-the-art silicon inlegraled technology. The SiGe base regions ofthese transistors are grımn selectivety on silicon substrates. Self-aligned slructures are used to reduce the external base resisıance aııd base colleclor parasitic capacitance. The germanium profile in Ihe base is graded to obtain a drift ejfect to reduce the base-transil tiıne. Si/SiGe integrated circuils for applications in optical-flber link systems and Si/SiGe microwave pover Iransistors have been produced wilh remarkable speeds. The SiGe semıconduaor material system, HBT slructures and fabricalion, and device performance issues are reviewed in thispaper.
Keywords : SiGe alloys, heterojuncîion bıpolar transislors

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