Fabrication and Electrical Characterization of Cu1-xCrxO/n-Si Diodes by Sol Gel Spin Coating Method

Authors : Şeyhmus TOPRAK, Şerif RÜZGAR

Pages : 1713-1723

Doi:10.21597/jist.1254573

View : 75 | Download : 36

Publication Date : 2023-09-01

Article Type : Research Paper

Abstract :Undoped and Cr-doped CuO thin films were deposited on n-Si substrates by sol gel spin coating method. These electrical properties of copper oxide-based heterojunction structures were examined as a function of Cr doping concentrations. The results show that a change in Cr concentration significantly affects the electrical properties of Ag/Cu1-xCrxO/n-Si diodes. The all diodes exhibit rectification behavior, as shown by their dark ????−???? characteristics. The crucial junction parameters such as series resistance insert ignore into journalissuearticles values(R????);, rectification ratio insert ignore into journalissuearticles values(????????);, ideality factor insert ignore into journalissuearticles values(????); and barrier height insert ignore into journalissuearticles values(Φ????); were calculated by using ????−???? data. The calculated values for the ideality factor insert ignore into journalissuearticles values(n);, which offered details about the performance of the diodes, range from 2.16 to 2.78. The highest ???????? value was obtained from Cu0.5Cr0.5O/n-Si diode. In addition, the capacitance-voltage insert ignore into journalissuearticles values(????−????); characteristics of the diodes were measured in the frequency range of 10 kHz and 1 MHz. The ????−2−???? graphs were employed to calculate the values of ????????, ????????, ????????????????, and Φ???? insert ignore into journalissuearticles values(????−????);. The results show that the electrical properties of Ag/Cu1-xCrxO/n-Si diodes can be controlled by various chromium doping concentration.
Keywords : Sol gel method, Thin Films, Diode, Electrical Properties

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