Application of QMSA Method for Al 0.3 Ga 0.7 N/GaN HEMT Structure

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Karadeniz Fen Bilimleri Dergisi
Volume:13 Issue:4
Application of QMSA Method for Al 0.3 Ga 0.7 N/GaN HEMT Structure

Application of QMSA Method for Al 0.3 Ga 0.7 N/GaN HEMT Structure

Authors : Ahmet Bilgili, Ömer Akpinar, Naki Kaya, Mustafa Öztürk

Pages : 1377-1385

Doi:10.31466/kfbd.1276114

View : 65 | Download : 49

Publication Date : 2023-12-15

Article Type : Research Paper

Abstract :In this study, Al 0.3 Ga 0.7 N/GaN high electron mobility transistor (HEMT) structure is grown on a sapphire (Al2O3) substrate by using metal-organic vapor phase epitaxy (MOVPE), and its electron transport and magnetic transport properties are investigated. Resistivity is measured in the 20-350 K temperature range. Hall mobility and Hall carrier concentration are measured in the 0-1.5 T magnetic field range and the same temperature range. Magnetic transport properties are analyzed using quantitative mobility spectrum analysis (QMSA). 2DEG and 3DEG transport mechanisms are separated by using QMSA results.
Keywords : GaN, HEMT, AlGaN, QMSA, Hall, Mobilite

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