Diode and Photodetector Characterization of Van der Waals Type InSe/CdS Heterojunction Device

Home Page
About
Submit A Journal
Submit A Conference
Submit Paper/Book
- Submit a Preprint
- Submit a Book
Contact

Kırklareli Üniversitesi Mühendislik ve Fen Bilimleri Dergisi
Volume:10 Issue:2
Diode and Photodetector Characterization of Van der Waals Type InSe/CdS Heterojunction Device

Diode and Photodetector Characterization of Van der Waals Type InSe/CdS Heterojunction Device

Pages : 246-255

View : 36 | Download : 70

Publication Date : 2024-12-31

Article Type : Research Paper

Abstract :In this study, an InSe thin film layer was deposited onto a CdS thin film layer produced via the chemical bath deposition (CBD) method using the Successive Ionic Layer Adsorption and Reaction (SILAR) technique. The produced heterojunction devices were divided into two groups, and one group was annealed in an ambient atmosphere at 80°C for 1 hour. The electrical characterization of both heterojunction devices was performed in the dark and under an illumination intensity of 100 mW/cm². The fundamental diode parameters (n, ϕb, Rs, I0)were analyzed using different methods. Furthermore, key photodetector parameters such as photocurrent, photoresponsivity, photosensitivity, and specific detectivity were determined for these two devices.
Keywords : InSe, CdS, Fotodedektör

ORIGINAL ARTICLE URL

VIEW PAPER (PDF)

* There may have been changes in the journal, article,conference, book, preprint etc. informations. Therefore, it would be appropriate to follow the information on the official page of the source. The information here is shared for informational purposes. IAD is not responsible for incorrect or missing information.