Electrical Characterization of Zn Based Al/Bi-ZnO/p-Si (MIS) Structures

Authors : Özkan Göçgeldi, Mümin Mehmet Koç, Çiğdem Ş. Güçlü, Burhan Coşkun

Pages : 267-282

Doi:10.34186/klujes.1796776

View : 42 | Download : 60

Publication Date : 2025-12-31

Article Type : Research Paper

Abstract :Thin films are a fundamental part of the electronic devices, where multilayered thin films for multilayered structures were often used to devices in various forms. Among them, metal-insulator-semiconductor (MIS) structures are one of the most favourable structures which were used in various applications, solar harvesting devices, photodetectors, and logic circuits. In this work, Zn based thin-films were doped with Bi (0.5 % ratio) using hydrothermal synthesis and Al/Bi-ZnO/p-Si structures were produced. Various electrical properties such as capacitance – voltage (C–V), conductance – voltage (G/ω-V), and series resistance – voltage (Rs–V) were assessed. In the electrical investigation, influence of voltage signal on electrical properties were assessed. Possible factors affecting the electrical properties, such as interface/surface states (Nss) and charge/current transfer mechanism (CTM) were evaluated. Fundamental physical parameters of the sample were also calculated from the interception and slope of 1/C2 vs V plot. The alteration of capacitance under illumination was investigated where light intensity related conductance – voltage characteristics were observed. All experimental results are indicated that the fabricated Al/p-Si/Au structures with (Bi-ZnO) can be used instead of the conventional traditional insulators grown by some traditional-methods.
Keywords : Bi–katkılı ZnO ince film, Al/(BiZnO)/p-Si/Au (MIS) Schottky yapılar, Sığa ve iletkenlik ölçümleri

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