ADVANCING MEMORY DENSITY: A NOVEL DESIGN FOR MULTIPLE-BIT-PER-CELL PHASE CHANGE MEMORY

Authors : İbrahim Çinar

Pages : 773-782

Doi:10.36306/konjes.1507600

View : 45 | Download : 41

Publication Date : 2024-09-01

Article Type : Research Paper

Abstract :Multiple-bit-per-cell phase-change memory (MPCM) has emerged as a promising solution to address the escalating demands for high-density, low-power, and fast-access memory in modern computing and data storage systems. This paper presents a novel device design aimed at enabling multiple bits per cell in phase-change memory, thereby significantly enhancing memory density while maintaining performance and reliability. Leveraging innovative material compositions and advanced fabrication techniques, the proposed design demonstrates the potential to push the boundaries of memory capacity, efficiency, and scalability. Through comprehensive simulation analysis and performance evaluations, we showcase the feasibility and advantages of the new device design, highlighting its potential to revolutionize memory architectures and meet the evolving needs of next-generation computing systems.
Keywords : Phase Change Memory, Multiple Bit Per Cell, Finite Element Modeling, Novel Design, Memory Architecture