Alttaş sıcaklığının expanding thermal plazma yöntemi ile elde edilen a-Si:H filmlerin optik ve elektriksel özellikleri üzerine etkisi

Authors : Tayyar GÜNGÖR, Guy J ADRIAENSSENS

Pages : 40-49

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Publication Date : 2011-06-01

Article Type : Research Paper

Abstract :Optical properties and dark current activation energy of hydrogenated amorphous silicon insert ignore into journalissuearticles values(a,Si:H); produced by the expanding thermal plasma chemical vapour deposition insert ignore into journalissuearticles values(ETPCVD); technique are investigated as a function of substrate temperature in the 150,500°C temperature range. The optical transmission spectra were used to obtain the thickness, refractive index, and optical band gap of the a, Si:H films. It is observed that while the refractive index is increasing with substrate temperature, the optical band gap and deposition rate, as well as the dark conductivity activation energy, are decreasing.
Keywords : Hydrogenated amorphous silicon, solar cell, optical parameters, optical transmittance