Fabrication and analysis of ZnO and Al-doped ZnO films using the SILAR technique

Authors : İlker Kara, Abjar Ibrahim Rashid Hafedh, Ihsan Sadeq Raheem Waelı

Pages : 1074-1079

Doi:10.28948/ngumuh.1439098

View : 257 | Download : 214

Publication Date : 2024-10-15

Article Type : Research Paper

Abstract :In this study, pure ZnO and Al-doped ZnO thin films at different concentrations were successfully grown on an ITO substrate using the SILAR method. The produced thin films were characterized by SEM/EDS, XRD, and UV-Vis spectroscopy. According to the XRD analysis results, it was observed that the produced thin films crystallized on a nanometer scale, and the crystallization quality varied depending on the concentration of Al doping. SEM/EDS analysis results indicated that Al-doped ZnO thin films affected the morphology, forming nano-root structures. UV-Vis analysis results showed that the band gap values of the thin films produced varied depending on the Al dopant, with decreased values, sharper absorption edges, and increased absorption intensities.
Keywords : SILAR method, Zinc oxide, Al doped ZnO